JOURNAL OF CRYSTAL GROWTH SCISCIE

中文简介

该杂志为从事晶体生长的实验和理论方面的研究以及晶体生长在器件等方面的应用提供了一个共同的参考和出版来源。实验和理论贡献发表在以下领域:成核和生长理论、分子动力学和输运现象、聚合物和玻璃等粘性介质中的结晶;金属、矿物、半导体、超导体、磁性、无机、有机和生物物质的晶体生长或作为薄膜;分子束外延、化学气相沉积、III-V、II-VI等半导体的生长;用物理和化学方法表征单晶;晶体生长的仪器、仪器和技术以及纯化方法;多层异质结构及其表征，重点在晶体生长和外延方面的电子材料。该杂志的一个特色是定期收录有关晶体生长相关方面的研讨会和会议记录。

投稿网址：http://ees.elsevier.com/crys/

英文简介

The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.