MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING SCISCIE

中文简介

半导体加工中的材料科学为讨论光电子、传感器、探测器、生物技术和绿色能源的功能材料和器件的新加工、应用和理论研究提供了一个独特的论坛。每一期将致力于提供当前的快照的见解、新成果,突破和未来趋势等不同领域的微电子、能源转换和存储、通信、生物技术(图)催化、纳米薄膜技术,混合和复合材料、化学处理、气相沉积、设备制造、和造型的支柱先进半导体加工和应用。覆盖范围将包括:用于亚微米设备的先进光刻技术;蚀刻及相关课题;离子注入;损害演化及其相关问题;等离子体和热CVD;快速热处理;先进的金属化和互连方案;介质层薄，氧化;溶胶-凝胶法加工;化学浴和(电)化学沉积;化合物半导体加工;新型非氧化物材料及其应用(宏观)分子和杂化材料;分子动力学、从头算方法、蒙特卡罗方法等;分立电路和集成电路的新材料和新工艺;磁性材料和自旋电子学;异质结构和量子器件;半导体光电特性工程;晶体生长机制;可靠性，缺陷密度，固有杂质和缺陷。

投稿网址：http://ees.elsevier.com/mssp/

英文简介

Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.